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| BUP 402 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 402 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 600 Unit V Pin 2 C Ordering Code C67078-A4405-A2 Pin 3 E VCE 600V IC 36A Package TO-220 AB VCE VEC VCGR RGE = 20 k Gate-emitter voltage DC collector current 600 VGE IC 20 A 36 22 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 72 40 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 42 mJ IC = 20 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Power dissipation Ptot 150 W - 55 ... + 150 - 55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-02-1996 BUP 402 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.83 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.5 mA, Tj = 25 C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 20 A, Tj = 25 C VGE = 15 V, IC = 20 A, Tj = 125 C VGE = 15 V, IC = 40 A, Tj = 25 C VGE = 15 V, IC = 40 A, Tj = 125 C Zero gate voltage collector current ICES 100 A nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 4 1040 115 66 - S pF 1400 175 110 VCE = 20 V, IC = 20 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-02-1996 BUP 402 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns 40 60 VCC = 300 V, VGE = 15 V, IC = 20 A RGon = 47 Rise time - tr 70 110 VCC = 300 V, VGE = 15 V, IC = 20 A RGon = 47 Turn-off delay time td(off) 250 330 VCC = 300 V, VGE = -15 V, IC = 20 A RGoff = 47 Fall time tf 500 680 VCC = 300 V, VGE = -15 V, IC = 20 A RGoff = 47 Semiconductor Group 3 Dec-02-1996 BUP 402 Power dissipation Ptot = (TC) parameter: Tj 150 C 160 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 36 A W Ptot 120 IC 28 24 100 20 80 16 60 12 40 8 4 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 20 0 0 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 t = 17.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W IC 100 s ZthJC 10 1 10 -1 1 ms D = 0.50 0.20 10 0 10 ms 10 -2 0.10 0.05 single pulse 0.02 0.01 DC 10 -1 0 10 10 -3 -5 10 10 1 10 2 V 10 3 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-02-1996 BUP 402 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 40 IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 40 A IC 30 17V 15V 13V 11V 9V 7V A IC 30 17V 15V 13V 11V 9V 7V 25 25 20 20 15 15 10 10 5 0 0 1 2 3 V 5 5 0 0 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 40 A IC 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Dec-02-1996 BUP 402 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 47 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 20 A 10 3 tf t t ns tdoff tr 10 2 ns tf tdoff 10 2 tr tdon tdon 10 1 0 5 10 15 20 25 30 35 40 A IC 50 10 1 0 20 40 60 80 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 47 3.0 Eoff mWs E E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 20 A 3.0 mWs E 2.0 Eon 2.0 Eoff 1.5 1.5 1.0 1.0 Eon 0.5 0.5 0.0 0 5 10 15 20 25 30 35 40 A 50 0.0 IC 0 20 40 60 80 120 RG Semiconductor Group 6 Dec-02-1996 BUP 402 Typ. gate charge VGE = (QGate) parameter: IC puls = 20 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V 10 0 Ciss 10 -1 6 Coss Crss 4 2 0 0 10 20 30 40 50 60 70 nC 90 10 -2 0 5 10 15 20 25 30 Q Gate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 I Csc/I C(90C) ICpuls /IC 6 1.5 4 1.0 2 0.5 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 7 Dec-02-1996 |
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